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Seminar: Low-cost, high-performance, single-crystal-like device layers and controlled self-assembly of nanostructures within device layers for wide-ranging energy and electronic applications

July 24, 2017
10:00 am - 11:00 am


Amit Goyal
Director, RENEW (Research & Education in eNergy, Environment and Water) @ SUNY-Buffalo
Empire Innovation Professor @ UB in CBE, EE, Physics, and Materials Design & Innovation
Emeritus Corporate Fellow & Distinguished Scientist, Oak Ridge National Laboratory
10 AM, Monday, July 24th, 2017
1127 Kemper Hall

Link to the flyer

Abstract: For many energy and electronic applications, single-crystal-like materials offer the best performance. However, in almost all cases, fabrication of single-crystal form of the relevant material is too expensive. In addition, for many applications, very long or wide materials are required, a regime not accessible by conventional single-crystal growth. This necessitates the use of artificially fabricated, large-area, single-crystal-like substrates suitable for heteroepitaxial growth of the relevant advanced material for the electronic or energy application in question. In this talk, details of the fabrication of such substrates will be discussed. Heteroepitaxial growth of nanolaminate multilayers and devices on such substrates using a variety of deposition techniques such as pulsed laser ablation, sputtering, e-beam evaporation, MBE, MOCVD, and chemical solution deposition will be reported upon. Application areas that have been demonstrated via the use of such artificial substrates include – oxide high-temperature superconductors, semiconductor materials (Si, Ge, GaAs, CdTe, Cu2O), ferroelectrics(BaTiO3), multiferroics (BiFeO3), etc. In addition, strain-driven self-assembly of second phase nanomaterials at nanoscale spacings has been demonstrated within device layers. Control of heteroepitaxy in lattice-mismatched systems and the effects of strain on self-assembly will be discussed. Such heteroepitaxial device layers on large-area, single-crystal-like artificial substrates are quite promising for a range of electrical and electronic applications.

Biography: Dr. Amit Goyal joined UB in January 2015 as Director of RENEW, the University at Buffalo’s new interdisciplinary institute dedicated to research and education on globally pressing problems in energy, environment and water Dr. Goyal received a B.Tech. (Honors) in Metallurgical Engineering from the Indian Institute of Technology, Kharagpur (India), a MS in Mechanical and Aerospace Engineering from the University of Rochester, NY and a PhD in Materials Science & Engineering from the University of Rochester, NY, executive business training from the Sloan School of Management, MIT and an executive MBA from Purdue University and an international executive MBA Tilburg University (The Netherlands).

Location

1127 Kemper Hall

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